电化学光伏法测定n-和p-GaAs少子扩散长度

Minority Carrier Diffusion Length Measurements in n-and p-GaAs by Electrochemical Photovoltage Method

从GaAs/电解液界面的电化学研究,提出了一种适合于测定化合物半导体少子扩散长度的光电化学新方法──电化学光伏法,用它成功地测定了n-和p-GaAs体单晶及外延层的少子扩散长度。

On the basis of electrochemical study on GaAs/electrotyte junction, a new photoelectrochemicalmethod, electrochemical photovoltage method, is reported for the determination of minoritycarrier diffusion length in compound semiconductors.The method has been successfully usedto determine the minority carrier diffusion length in n- and p-GaAs.