摘要
研究了在200℃热靶条件下经Si^+单注入和S^++P^+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si^+150keV,5×10^(14)cm^(-2)+P^+160keV,5×10^(14)cm^(-2)双注入样品经850℃、5秒快速效退火后,最高载流子浓度达2.6×10^(19)cm^(-3),平均迁移率为890cm^2/V·s。
The electrical properties of Si^+ singly and Si^++P^+ dually implanted semi-insulating InPat 200℃ after conventional furnace annealing (FA) and rapid thermal annealing (RTA)have been studied. After FA, the electrical properties of the dually implanted samples arebetter than that of the singly implanted samples.By using the RTA,the effect of dual implantationsis more evident.The measured maximum electron concentration and average electronmobility for sample dually implanted by Si^+ 150 keV, 5×10^(14)cm^(-2)+P^+ 160keV, 5×10^(14)cm^(-2)and annealed at 850℃ for 5s are 2.6×10^(19)cm^(-3) and 890cm^2/V·s, respectively.
关键词
磷化铟
离子注入
Si+P
热退火
InP
Dual Implantations
Conventional furnace annealing
Rapid thermal annealing
