氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善

Improvement of GaAs Schottky Barriers by Using Substrate Negative Bias Presputtering in Nitrogen Ambience

本文研究了不同气氛下衬底负偏压预溅射对GaAs肖特基势垒特性的影响。我们发现,采用氮气氛下衬底负偏压预溅射新工艺能明显改善GaAs肖特基势垒特性:势垒高度增高,势垒电容减小和二极管反向击穿电压增大。这种新工艺对于GaAs肖特基势垒特性改善和GaAs MESFETs性能提高是一个非常有用的技术。

The effect of negative bias presputtering in different ambiences on GaAs Schottky barriersis investigated.The electrical characteristics of the GaAs Schottky barrier are distinctly improved by using negative substrate bias presputtering in Ns ambience. The barrier height andthe reverse breakdown voltage are increased, and the diode capacitance is reducted. The newprocess is a very powerful technique for the improvement of the Schottky barreirs characteristicand GaAs MESFET.