摘要
本文研究了多晶硅应变膜压力传感器制作技术,提出了防止多晶硅应变膜变形的工艺条件,研制出了多晶硅应变膜压力传感器。这一技术简单、与IC工艺较为兼容,适合研制集成压力传感器。
The fabrication techniques for polysilicon-diaphragm pressure sensors were studied.The
process conditions for making undeformed polysilicon-diaphragm were suggested, and polysilicon
-diaphragm pressure sensors were made. The technology is simple, and has better process compatibility
with current IC technology. Therefore, it sutits to the fabrication of integrated pressure
sensors.
基金
国家自然科学基金
关键词
压力传感器
多晶硅
应变膜
Pressure sensor
Polysilicon
Annealing
