N^+型重掺杂硅快速氧化新方法──氟化氢增强氧化之二

A Novel Method of Rapid Oxidation of Heavily Doped N^+Type Silicon──HF Enhanced Oxidation (2)

本文对重掺杂单晶硅和多晶硅薄膜的加HF增强氧化的行为进行了研究。氧气中HF含量为480ppm,温度为750至900℃。发现重掺磷或砷的硅的氧化反应速率很快,速率常数比轻掺杂硅的干氧氧化提高了几十倍至几百倍。而重掺硼的硅单晶对氧化速率并无明显影响。文中对重掺杂元素和HF增强硅氧化的机理作了分析,并提出了一个物理模型,可以较好地解释实验现象。

The HF enhanced oxidation of heavily As and P doped (100) silicon wafers and polysilicon thin films in oxygen atmosphere with 400--50f ppm HF addition at temperatures ranging from 750℃ to 9000℃ were investigated. These reactions were very rapid, and the oxidation rate constants are 1-2 orders of magnitude higher than that of the low doped silicon oxidized in pure oxygen, and also several times higher than that of the heavily doped N^+ type silicon oxidized in dry oxygen.But there is no distinct difference between lightly and heavily boron doped silicon oxidation with HF addition. A physical model is suggested to explain the rapid oxidation reactions.