摘要
对SiGe/GaP合金进行的退火研究发现,当这种合金经受了高温-低温-高温三步骤退火后,材料的温差电功率因子(α~2σ)得到了进一步的改善。
A three-step heat treatment has been employed o improve the thermoelectric properties of
SiGe/GaP alloys. It is found that the power facters (α~2σ) of the alloys have been increased
further compared to that obtained by a single high tenperature heat treatment.This indicates
that other mechanisms or agencies besides an increased dopant solubility are also responsible for
the improvement in thermoelectric performance of this materials.
关键词
硅-锗合金
高温退火
温差电性质
SiGe alloys
Heat treatment
Thermoelectric properties
