单晶晶胞参数的X射线双晶衍射测定方法

Measurement of Unit Cell Parameters in Single Crystal by Double-Crystal Diffraction

作者提出一种以已知晶胞参数的单晶为参考标准测定样品单晶晶胞参数的方法。测定结果包括晶胞参数a、b、c、α、β、γ及样品相对参考晶体的取向。对测量中可能产生的误差进行了讨论并介绍了提高测量精度的方法。对GaSb_xAs_(1-x)/GaAs(x=0.97)样品测定的结果表明,GaSb_xAs_(1-x)晶胞已不再是严格的立方结构。

A double-crystal diffraction technique has been developed for measuring the unit cell parameters in single crystal wafers.It is based en comparing the sample to the standard crystal with the previously characterized unit cell parameters.The information be obtained includes a,b,c,α,β,γ of the sample as well as its orientation relative to the standard crystal. A detailed discussion about the measurement error and the improvement of precision has been given The experiments show that the unit cell of the GaSb_xAs_(1-x)(X=0.97) epitaxial layer on substrate GaAs is never cubic.