L－B单分子膜制备的MIS结构和电容电压特性

Structure and C-U Characteristics of MIS Device Made with L-B Films

利用Ｌ－Ｂ单分子功能膜的绝缘性制作ＭＩＳ器件．通过对它的结构和电容－电压（Ｃ－Ｕ）特性曲线的研究，发现Ｌ－Ｂ膜可以改善ＭＯＳ器件的性能和消除ＭＯＳ器件的“异常”Ｃ－Ｕ特性现象，利用Ｃ－Ｕ特性曲线可以检测Ｌ－Ｂ膜成膜质量，利用零偏压时的电容值可以计算各成膜材料的介电常数．

MIS device have been made making use of the insulating characteristics ofthe L-B film Studying the MIS structure and capancitance-voltage (C-U) curve, it is found that L-B film can improve the function and eliminate the abnormal phenomena of the C-U characteristic curve of the MOS device. Being a probe, the C-U characteristic Curve of the L-B film can be ed as a tool tO verify the quality of the L-B film deposition.Making use of the Value of the capacitance atzerobias, the dielectric constant of L-Bfilm materials can be calculated.