摘要
洁净硅表面在电子束的作用下产生诱导氧化现象,在AES分析中已得到证实。本文利用TEM 200CX型电镜研究了洁净硅表面在电子束作用下的结果,实验表明,在TEM中同样存在着电子束诱导硅表面氧化的现象,氧化生成了SiO_2微晶,其氧主要来自硅晶体内氧的局部富集和电镜中残余气体在硅表面的吸附。
It was verified that a clean silicon surface experienced an oxidation induced by electronbeam irradiation in AES. This paper gives the experiment results of a clean silicon surface irradiatedby electron beam in TEM. It shows that the silicon surface oxidation induced by electronbeam irradiation in TEM is similar to thatin AES.The results show that SiO_2 microcrystalsare produced. The resources of oxygen mainly cone from the local oxygen rich region in singlecrystal silicon and the residual gases in vacuum.
