摘要
本文着重研究了1400℃超高温退火对SIMOX结构的影响,并与常规的高温退火(1100℃)进行了对比。实验结果表明:超高温退火能显著地改善Si-SiO_2界面特性。消除顶部硅层中的氧沉淀缺陷。但同时,超高温退火也给SIMOX带来了硅片形变、滑移、顶部硅层中氧含量高等新问题。
The effect of annealing at 1400℃ on the SIMOX seructure is investigated, and the resultsare Compared with that of annealing at 1100℃. Experimental results show that the annealingat very high temperature can dramatically improve the characteristics of Si/SiO_2 interface, andeliminate the oxygen precipifates in the top silicon layer. However, the annealing at very hightemperature brings about some new troubles, such as warpage of the wafer and slipping-up, tothe SIMOX structure.
关键词
半导体材料
高温退火
结构性能
Defective transitional region
Threading dislocation
oxygen precipitates
Separation by Implanted oxygen (SIMOX)
