两步退火对SIMOX结构形成的影响

Effect of Two Step Annealing on Formation of SIMOX Structure

本文通过卢瑟夫沟道背散射(RBS/Channeling)及透射电子显微镜(TEM)研究了SIMOX结构的低、高温两步退火形成。实验结果表明:通过两步退火可以获得顶部硅层中无氧沉淀缺陷的、硅与二氧化硅界面较为突变的SIMOX结构。本文也讨论了在两步退火期间,SIMOX结构形成的物理过程。

The formation of SIMOX structure by two step annealing (550℃ 60 h+1250℃ 2h) is investigatedby using RBS/channeling and cross-Sectional TEM. The results show that the SIMOXstructure with more abrupt Si/SiO_2 interface and no oxygen precipitates in the top si layer canbe obtained by the two step annealing.Formation process of SIMOX structure during the annealingis also discussed.