摘要
本文介绍了用激光化学汽相沉积的方法在Si和TiN基板上沉积钨的实验研究。沉积过程由反射率探测法实时监测,实验结果表明:钨的沉积速率依赖于WF_6和H_2的比例、压力、激光功率和基板的物理性质。实验得到了3μm宽的钨膜。
An experimental investigation of tungsten deposited on Si and TiN using laser chemicalvapor deposition (LCVD) has been presented. The LCVD process was monitored by the in situreflectivity detection, and it is shown that the deposition rate of tungsten depends on the ratioand pressure of WF_6 and H_2 mixture, the power of laser, and the physical properties of thesubstrates.A line width of 3μm of deposited tungsten film has been obtained.
关键词
激光化学汽相沉积
钨
硅
氮化钛
Laser chemical vapor deposition
Tungsten
Silicon
Titanium nitride