摘要
本文用深能级瞬态谱(DLTS)法,结合表面光伏(SPV)法和某些常规测试,较系统地研究了1MeV能量和不同剂量的电子辐照下对N型LPE-GaAs层逐次引入的缺陷。研究了400～550K温区等时退火行为。讨论了随辐照剂量逐次增大及等时退火后,缺陷浓度N_T的变化和少子扩散长度L_p随N_T的变化情况。首次用理论和实验手段论证了由电子辐照引入的所有电子缺陷能级中,E_3为主要的复合中心能级。同时通过对Shockley-Read-Hall公式的简化提出了一个在诸多缺陷能级中判别出其中主要复合中心能级的方法,实验结果也证实了这种判别方法是行之有效的。
Using deep-level transient spectroscopy, surface photovoltage and the routine measurements,the defects induced by different doses of elec(?)ron irradiation with 1MeV energy in theN-type LPE GaAs layers, and their isochronal annealing behavior at temperatures rangingfrom 400K to 550K have been systematically studiec.The variations of defect density andminority carrier diffusion length are discussed as the electron radiation dose increases andafter isochronal annealing. It has been proved both theoretically and experimentally for the firsttime that the level E_3 is the main recombination cen re level in all of the defect energy levelsinduced by electron radiation.It is also shown that the main recombination centre level amongall the defect levels can be effectively identified by using Shockley-Read-Hall formula.
