摘要
本文首次提出了一个用以分析ＧｅｘＳｉ１－ｘ合金ＣＶＤ生长的流体力学和表面反应动力学的统一模型，利用流体力学的偏微分方程组计算了反应管内的速度场、温度场和浓度场。讨论了反应管中的质量传输对生长速度的影响和生长过程中锗和硅的不同的生长速度控制机制。从生长的初始条件出发同时模拟了ＧｅｘＳｉ１－ｘ合金外延层的生长速度和外延层中的锗组分。计算结果和实验结果符合得很好。本文还定量地解释了外延速度及薄膜中锗组分随ＧｅＨ４浓度的变化规律。
A model that combines mass transportation process and surface kinetics is firstly applied to analyze the GexSi1-xCVD process. The temperature, velocity ad concentration distributions in the reactor are calculated by the partial different equations of fluid dynamics. The surface kinetics is used to discuss the deposition of Si and the mass transportation process is used to discuss the deposition of Ge. The theoretical relationship between the initial conditions and the Ge composition x in the solid has been established. The calculated result of the growth rate and the Ge composition in the solid agree with the experiment data. The increase of the growth rate and Ge composition x with the increase of initial GeH4 concentration is explained quantitatively by our model.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第5期7-12,共6页
Acta Electronica Sinica
