摘要
本文提出了一种利用测量AM-AM、AM-PM特性对微波GaAsFET大信号建模的方法.此外,利用测量或理论求得的AM-AM、AM-PM非线性特性,可进一步分析放大器的增益、互调性能,避免多音(射频)激励下进行测量或理论分析的麻烦.结果表明,理论与实验甚为一致.
A method of GaAs FET large signal modelling using rneasured AM-AM and AMPM ourves is proposed, and the analysis means of intermodulation distortion and large signal gain in GaAs FET with single-tone AM-AM and AM-PM characterization is also presented. It can reduce complexity of analysis. The analysis is in agreement with experimental results.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第6期72-76,66,共6页
Acta Electronica Sinica
关键词
微波
场效应晶体管
功率放大器
互调计算
Microwave, Field effect transistor,Power amplifier, large signal modelling,Intermodulation calculation