扫描隧道显微镜与隧道谱测量

Scanning Tunneling Microscopy and Spectroscopy Analysis

本文以低维化合物系统为主要研究对象,介绍利用扫描探针显微镜进行隧道谱测量的基本原理及一些实验成果。说明隧道谱分析方法是获得费米能级附近电子能态分布情况的重要途径之一,对由于掺杂、表面吸附导致的电子能量密度的变化可以进行有效的检测。另外,关于隧道结构本身的势垒效应和能带弯曲效应的研究,对于一般性的隧道谱研究有重要参考意义。由于STS方法具有高分辨率和极好的局域性等特点,使其在研究表面局部电子能态分布方面具有难以替代的作用。

We used the low dimensional compounds as the examples to demonstrate the basic principles of scanning tunneling spectroscopy (STS). The experimental results, as well as theoretical analysis, illustrate that the STS method is a powerful tool to obtain information concerning the density of states (DOS) at Fermi level. For varia-tions of DOS associated with surface adsorbtion and intercalation, STS could offer an unique way to provide highly local and accurate account of the processes. The investigations on the effects of barrier heights, band bendings, etc., could benefit the studies of tunneling spectroscopy of other materials.