Monte Carlo方法在微束分析中的应用

Applications of Monte Carlo Method in Microbeam Analysis

我们发展了一种新的Monte Carlo模型用于模拟电子在固体中的散射过程和级联二次电子的产生及发射过程。这个模型不含参数,而且模拟计算出的背散射电子的能量分布与实验结果符合极好,证实了此Monte Carlo模型对于理解电子能谱分析术和扫描电子显微术中的物理过程是极为有效的。本文在介绍这个模型的同时还概述了Monte Carlo方法的发展历史,并总结了我们最近在MonteCarlo方法应用方面的一些工作,包括:俄歇电子能谱中背散射电子背景和非弹性散射俄歇电子背景的计算、扫描电镜中二次电子级联产生的计算机模拟、电子探针微分析术中连续X光谱背景的计算。

We have developed a new Monte Carlo model for the simulation of electron scattering process in solids as well as the secondary electron cascade production and emission processes. This model is free of fitting parame-ter. Very good agreement between the calcuation and experimental measurement has been found on the energy distribution of backscattered electrons, which verifies the effectiveness of the model for studing electron spec-troscopy and scanning electron microscopy. This paper describes briefly the new Monte Carlo model and the his-torical development of Monte Carlo simulation methods. Also, we have summarized some of our recent workson the application of Monte Carlo method including: the simulation of cascade secondary electron generation; the calculation of background of backscattered electrons and inelastically scattered Auger electrons in AES; the simulation of the continuous X-ray spectra in EPMA.