摘要
研究了有源面积为９ｍｍ２的双面肖特基势垒ＧａＡｓ粒子探测器的电特性。器件工艺简单，结构新颖，反向耐压高于３００Ｖ，反向漏电流密度低（９１ｎＡ／ｍｍ２），该器件能经受能量为１．５ＭｅＶ、剂量为１０００ｋＧｙ的电子照射，电特性正常，是一种抗辐照的粒子探测器。
The electrical characteristics of double Schottky barrier GaAs particle detectors with 9mm2 active areas have been investigated in this paper.The devices,which are new in structure and easy to process,show breakdown voltages of higher than 300 V and leakage current density of lower than 91 nA/mm2.The electrical characteristics remain normal after 1. 5 MeV electron irradiation of 1000 kGy.It is a promising radiation-resistant particle detector.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第1期24-27,共4页
Research & Progress of SSE
关键词
砷化镓
探测器
抗辐照
GaAs Detector Radiation-resistance
