氢化非晶硅带隙态密度光诱导变化的研究

A Study of Photoinduced Changes in Density of Gap States in Hydrogenated Amorphous Silicon

报导了与Ｓｔａｅｂｌｅｒ－Ｗｒｏｎｓｋｉ效应相关的氢化非晶硅（α－Ｓｉ：Ｈ）带隙态密度的光诱导变化，结果表明光照将使α－Ｓｉ：Ｈ带隙上半部分态密度的分布发生变化，采用ＡＭ１太阳光谱＊光照两小时使得导带迁移率边以下０．７ｅＶ处的带隙态密度从４×１０１６ｃｍ－３ｅＶ－１，增大到１×１０１７ｃｍ－３ｅＶ－１。

We have observed a photoinduced modification of bulk density of gap states in hydrogented amorphous silicon(α-St:H) associated with the staeblerwronski effect.The results indicated quite clearly that the density of states in the upper-half of the gap was changed by exposing.Two hour exposure(AMl) made that the density of the gap states 0.7 eV below Ec changed from 4×1016cm-3eV-1to 1×1017cm-3eV-1.