高温超导微波电路衬底材料复介电常数的测量

MEASUREMENT OF COMPLEX PERMITTIVITY OF MIC SUBSTRATES FOR DEPOSITION OF HTS THIN FILMS

本文讨论了在液氮温度下高温超导微波电路介质衬底材料复介电常数测试技术。利用TMono模高Q圆柱形谐振腔,对高温超导常用的几种单晶介质材料进行了测试。结果表明,该测试技术在不同温度下,可对低耗单晶和各向同性介质材料进行准确的测试,且测试简便、迅速、自动化程度高,具有测试介质材料某一方向复介电常数的优点。

A technique is analysed for the determination of complex permittivity of MIC substrates for deposition of high-Tc superconducting (HTS) thin films. By using high Q factor TMono circular cavity, several monocrystals which are often used for deposition of HTS thin films are measured. The results show that the technique covers accurate measurements of the low-loss monocrystal and isotropy dielectric materials at different temperatures, and the test is simple, rapid and automatic, and some directional complex permittivity of the dielectric materials can be measured.