摘要
采用芯片设计优化、工艺改进及内匹配等技术,研制出应用于工程的脉冲功率晶体管.该管宽频带(540~610MHz),长脉宽(50μs),高占空比(15%),带内增益平坦度为±0.5dB,集电极输出效率ηc≥50%。
Using optimization of chip design, improvement of technologies and inner-matching, the pulse power transistor for engineering has been developed.It has wide frequency band(540~610MHz), long pulse width(50μs)and high duty cycle(15%). And its gain flatness in band is±0.5dB and the collector output efficency ηc≥50%.
出处
《半导体情报》
1996年第3期19-22,共4页
Semiconductor Information
关键词
脉冲宽度
匹配网络
功率晶体管
Pulse width, Matching network, Power transistor