中子引起单粒子翻转过程中能量沉积统计分析

Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons

利用Monte Carlo方法,对14 MeV中子引起存储器单粒子翻转过程进行了计算模拟,从而对引起单粒子翻转的关键因素———存储器灵敏区中的能量沉积进行了统计分析,为了解单粒子翻转随机过程提供了详细的能量沉积统计信息。

The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method. The deposited energies in sensitive volumes in the chip, which is an important factor in the single event upset, are statistically analysed. The statistic information about the deposited energies is provided for understanding the detailed random process of the single event upset.