高亮度绿色OLED的制备与光电性能研究

Study on Optical and Electronic Performance of highly Bright Green OLED

利用高精度膜厚控制仪,实现有机薄膜功能材料真空热蒸镀,制备了一种多层结构ITO/CuPc(20nm)/α-NPD(60nm)/Alq3(40nm):C545T(2%)/Alq3(20nm/LiF(1nm)/Al(100nm),获得了发射峰位于525nm稳定的绿色有机电致发光二极管(OLED),其起亮电压为2.5V,驱动电压在20V时亮度为10,500cd·m-2,色坐标(CIE)x=0.331、y=0.625,最大流明效率为3.921m·W-1。

Highly green oganic light-emitting diode（OLED） was developed using vacuum deposition. The typical multilayer structure OLED is ITO/CuPc （20 nm）/α-NPD （60 nm） / Alq3（40 nm）.C545T（2%）/Alq3（20 nm/LiF（1 nm）/Al（100 nm）. The voltage of device start working is lower the other article reported,only 2.5 V. The brightness of the device was measured to be 10,500 cd · m^-2 at the drive voltage 20 V. The green emission with peak at 525 nm and CIE coordinates x=0. 331,y=0. 625, maximum luminous efficiency 3.92 m·W^-1.