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浸没式ArF光刻最新进展 被引量：3

Most Recent Development of Immersion ArF Lithography
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摘要 简单概述了浸没式ArF的发展历史、特点和面临的科学技术问题,在跟踪报道国内外最新研究进展的同时,介绍前沿光刻技术的研发特点和研究手段,强调协同设计研究的重要地位,并揭示浸没式ArF光刻不是干式ArF光刻的简单移置和延续。 Outline of the history, features and challenges of immersion ArF lithography is given in this paper. The most recent development of immersion ArF lithography is presented by tracing recent publications and news, The method and trace of R ＆ D in advanced lithography area is introduced which reveals that the co-design is the most important. These also prove that immersion ArF lithography and dry ArF lithography are significant different.
作者 李艳秋
机构地区 中国科学院的电工研究所
出处 《电子工业专用设备》 2006年第3期27-35,共9页 Equipment for Electronic Products Manufacturing
基金 国家863项目 973项目（No.2003CB716204.）的资助
关键词 浸没式ARF光刻 下一代光刻 PROLITH MicroCruiser 分辨率增强 Immersion ArF Lithography Next Generation Lithography （NGL） PROLITH MicroCruiser Resolution Enhancement Technology （RET）
分类号 TN305.7 [电子电信—物理电子学]
  • 相关文献

参考文献61

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二级参考文献26

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共引文献8

同被引文献18

  • 1朱贻玮.我国IC芯片制造线目前状况分析[J].半导体（光伏行业）,2010(1). 被引量：1
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引证文献3

二级引证文献8

电子工业专用设备
2006年 第3期

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