SiC肖特基势垒二极管在PFC电路中的应用

Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode

介绍了一种SiC肖特基势垒二极管在PFC电路上的应用。利用新型材料———SiC作成的二极管具有高工作温度、高耐压、正温度系数,反向特性好的特点,降低了自身及其MOSFET的开通损耗,最直接的效果就是效率升高,同时也使EMC的效果得以改善,而且二极管可以并联使用。

New material--SiC used for power factor correction is introduced in this paper. The characteristics of SiC Schottky barrier diodes are higher operating temperature, higher voltage, zero reverse recovery time. It can improve the efficiency and the EMC to use the SiC Schottky barrier diodes.