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Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors

Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors
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摘要 Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes. Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第4期1042-1045,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Program of China under Grant No 2004AA404240.
关键词 CHEMICAL-VAPOR-DEPOSITION PB(ZR TI)O-3 THIN-FILMS ELECTRODES FATIGUE MEMORY POLARIZATION TITANATE SILICON CHEMICAL-VAPOR-DEPOSITION PB(ZR TI)O-3 THIN-FILMS ELECTRODES FATIGUE MEMORY POLARIZATION TITANATE SILICON
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