GaAs MEMS微波功率传感器的设计与模拟

Design and Simulation of GaAs MEMS Microwave Power Sensor

已有的微机械直接加热终端式微波功率传感器是基于CMOS工艺的,该结构基于GaAsMMIC工艺,它可以与GaAs微波电路实现单片集成。它的基本工作原理是热电效应,制备中使用了GaAs体加工技术来减少热量损失。并用软件对其温度场和反射系数进行了模拟。该传感器用于X波段,它的输入功率是0到50mW,灵敏度为0.54V/W,输入端S11参数约为-15dB.

The micromachined directly heated terminated microwave power sensor presented is fabricated in CMOS technology. This paper presents a MEMS microwave power sensor fabricated in GaAs MMIC technology, it allows monothilic integration with GaAs MMIC. Its basic workiong theory is thermoelectric effect. GaAs bulk micromachineing is used to reduce the thermal loss. Its temperature distribution and reflection eoeffiecience are simulated in software. The input power range is 0 to 50 mW. Sensitivity is 0. 54 V/W. The input return loss S11 is about -15 dB.