摘要
铁磁形状记忆合金(FSM A)是一种新型智能材料,N i-M n-G a合金是这种材料的典型代表。本文使用ECR磁控溅射方法在N aC l晶片上制备出了N i-M n-G a薄膜,并对其制备溅射功率进行了探讨。通过对薄膜成分和表面性质的分析,知22.5 W为其制备的最佳功率。对沉积在玻璃片上的薄膜进行衍射分析各其为有序化程度不高的晶态。
The Ni-Mn-Ga alloy is a typical one of ferromagnetic shape memory alloys （FSMA） as a new type of intelligent materials. The Ni-Mn-Ga thin films were deposited on NaCl substrate via ECR magnetron sputtering process, of which the sputtering power is discussed. By comparing the composition and surface properties of Ni Mn-Ga films, 22.5W was regarded as the best sputtering power. XRD results of the films on glass substrates showed that they are in lowly ordered crystalline state.
出处
《真空》
CAS
北大核心
2006年第2期18-20,共3页
Vacuum
