纳米硅/氧化硅多层膜的电性能及结构研究

Electric and Structural Properties of Silicon/Silicon oxide multilayer nanofilms

用真空蒸发技术和自然氧化法在玻璃衬底上制备纳米级的硅/氧化硅薄膜和多层膜。本文采用三点法测定了常温、低温下的U-I特性,发现常温、低温下纳米量级的硅/氧化硅多层膜具有类似负阻的特性。SEM检测表明,硅/氧化硅多层膜的厚度和称重法所估算的厚度相符,薄膜表面均匀。TEM和XRD观察表明薄膜主要以无序状态存在,局部有晶化现象。

Silieon/Silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation. The U-I properties of the samples at room temperature and cryogenic temperature （77K） were measured by three-point method, and it was found that there is an effect like negative resistance in such multilayer films. The SEM results showed that the surface of multilayer films is homogeneous and their thickness is in accord with that by weighing method. TEM and XRD observations indicated that the multilayer films arc mainly in disorderly state with local microcrystalline phase.