一种有机/金属肖特基二极管的实验研究

Investigation of a Type of Organic/Metal Schottky Diode

提出了一种简单有效的有机／金属肖特基二极管的制备方法：通过简单的真空气相沉积工艺，依次将有机材料PTCDA（C24H8O8）薄膜和金属电极Au蒸镀在透明导电玻璃ITO上．通过在室温条件下对该二极管的电流-电压（I-V）特性的测试发现，其整流系数可达10^4．根据标准肖特基理论以及实验所得电容-频率（C-f）和电容-电压（C-y）的测试结果，得到该有机肖特基势垒高度在0．2～0．3eV范围内．

An effective preparation method is proposed for a type of organic/metal Schottky diode. An organic film,3,4 ： 9, 10 perylenetetracarboxylic dianhydride（PTCDA）, and a metal electrode Au are deposited on the ITO respectively with a simple vacuum evaporation technology. The I-V properties of the diode,measured at room temperature, show that the cornmutating coefficient of the devices reaches 104. According to standard Schottky theory and the measurements of capacitancefrequency and capacitance-voltage,we can conclude that the organic Schottky potential is about 0.2-0.3eV.