CNT-FED中光刻工艺的研究

Investigation of Lithography Process in CNT-FED

在碳纳米管场致发射显示器件结构中,需要采用光刻的方法制备各种不同的ITO图案和电极图案。本文着重介绍了ITO玻璃的表面处理和光刻过程。实验中采用在紫外曝光条件下,对光刻工艺中影响其刻蚀结果分辨率的各种因素做出了系统分析。这些因素主要包括了对于感光胶的选择,玻璃表面的清洁度,丝网印刷工艺的操作,紫外光曝光时间的控制,酸腐蚀浓度。通过优化实验工艺,得到满足精度要求的精细条纹,得出最佳的光刻条件。

The authors use lithography technology to fabricate all kinds of ITO and electrodes＇ patterns in diode - type CNT-FED. We mainly discuss the treatment of surface of ITO glass and process of lithography. We also discuss the factors of lithography, including the cleaning of substrate glass, the operating of lithography, the controlling of the exposure time, and the concentration of acid. By optimizing these processes, we have got the precise strips pattern required by the CNT-FED and also the best conditions of lithography technology.