摘要
Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X-ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30nm is obtained by both techniques.
Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing（RTA）, respectively. From the Raman spectra, X- ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850 ℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30 nm is obtained by both techniques.
