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Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector
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摘要 According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out. According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.
作者 LIU Shu-ping JIA Yue-hu
机构地区 Taiyuan University of Science and Technology
出处 《Semiconductor Photonics and Technology》 CAS 2006年第1期21-24,共4页 半导体光子学与技术（英文版）
基金 Education Foundation of Shanxi Province(200341)
关键词 GESI/SI Superlattice nanoerystalline PHOTODETECTOR GeSi/Si 超晶格 纳米晶体 光电探测器 光学性质
分类号 TN256 [电子电信—物理电子学]
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参考文献20

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Semiconductor Photonics and Technology
2006年 第1期

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