摘要
The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene(BCB) material. The results show that the bonding temperature is below 250℃, the helium hermetic capability of both silicon-BCB-silicon and silicon-BCB-glass package are better than 6×10~ -4 Pa·cm^3/s. The shear strength is enough for package. The hermeticity is still good after the 15 cycles’ thermal shock test. The relationship between the leakage rate and the distance from the hole to the device border were also discussed with a seepage model.
The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene（BCB） material. The results show that the bonding temperature is below 250℃, the helium hermetic capability of both silicon-BCB-silicon and silicon-BCB-glass package are better than 6 × 10^-4· Pa · cm^3/s. The shear strength is enough for package. The hermeticity is still good after the 15 cycles＇ thermal shock test. The relationship between the leakage rate and the distance from the hole to the device border were also discussed with a seepage model.
基金
Key Programof Knowledge Innovation Engineering for Chinese Academy of Sciences
