摘要
本文设计了一种检测方法,它提拱精确可控制、且在一定的条件下磁感应强度的大小是稳定的磁场,同时设计了一种低噪声的放大电路对磁阻元件的输出进行测量。利用这个装置,可以精确地测量薄膜式InSb-In磁阻元件的灵敏度。本文检测并讨论了磁阻式Insb-In磁阻元件在一定的磁偏置的条件下,外加磁感应强度B与磁阻元件的电阻值的变化率间的关系,从而提出了一种精确、便捷的薄膜型InSb-In磁阻元件的测量方法。
A new kind of measuring way is introduced in this paper by which a magnetic field with invariable magnetic induction density under some special condition can be presented. A low noise amplification circuit also is designed for measuring the output of the sensor. The sensitivity of the film InSb-In magnetoresistive sensor can be measured easily using this equipment. The relationship between the resistive changing rate of the film InSb-In magnetoresistive sensor and the magnetic induction density around the sensor is discussed and measured. By this way, a new method is put forward to measure the sensitivity of the film InSb-In magnetoresistive sensor easily and accurately.
出处
《传感器世界》
2006年第2期25-28,共4页
Sensor World
基金
广东省自然科学基金资助项目(项目编号:31515)
关键词
薄膜磁阻元件
INSB-IN
灵敏度
检测
均匀磁场
磁感应强度
InSb-In
film magnetoresistive sensor
sensitivity measurement
symmetrical magnetic field
magnetic induction density