用甲醇－氢混合气源在不锈钢上生长金刚石薄膜的研究

STUDY ON DIAMOND FILM DEPOSITION GROWTH ON STAINLESS STEEL USING GAS SOURCE OF CH 3OH/H 2Zhang Xiaoping

利用甲醇－氢（ＣＨ３ＯＨ－Ｈ２）混合气体为气源，３０ｎｍ厚的无定形硅为过渡层，借助于微波等离子体化学气相沉积（ＭＷＣＶＤ）成功地将金刚石薄膜生长在不锈钢上，其最低生长温度可至４２０℃，并且甲醇－氢混合气体比传统的甲烷－氢（ＣＨ４－Ｈ２）更具优势。

By means of microwave chemical vapor deposition (MWCVD) method,CH 3OH/H 2 gas mixtures are used as a gas source,along with a 30nm amorphous thick silicon as a transition layer,a diamond film can successfully be grown on a stainless steel substrate,with a lowest growth temperature of 420℃.Tests show that the joint strength between the diamond film and the stainless steel substrate is high enough to be used as a wear resisting layer in industry.