摘要
在异质结能带排列的理论计算中,采用经验赝势能带计算方法,并将平均键能Em作为参考能级,计算了GaAs/Ge,AlAs/GaAs和AlAs/Ge三种异质结的整体能带结构和排序(包括价带、导带和带隙),获得完整且较准确的理论计算结果,其价带偏移ΔEv的计算值分别为057,050和107eV.
Taking the average bond energy E m as reference level,an empirical pseudopotential scheme is employed to calculate the band alignment (including valence band,conduction band,and band gap) of three semiconductor heterojunctions:GaAs/Ge,AlAs/GaAs and AlAs/Ge and the complete and more accurate calculation results are obtained.In our calculation,the valenceband offset values Δ E v of the above three heterojunctions are 0 57,0 50 and 1 07eV,respectively.
出处
《物理学报》
CSCD
北大核心
1996年第9期1536-1542,共7页
Acta Physica Sinica
基金
国家自然科学基金及福建省自然科学基金