摘要
本文介绍了快脉冲堆瞬态辐照试验的瞬时退火结果。实验采用了合理的试验方法和监测系统。在国内首先测到了三极管中子辐照的瞬时退火曲线，并与国外有关实验结果作了比较。
This papaer presents the transient annealing(transient irradiation )effect of semiconductor devices on fastneutron pluse reactor.The curve of transient annealing has been firstly measured in China and 5 models of tran-sistors were used in our experiment(
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
1996年第1期56-62,共7页
Nuclear Electronics & Detection Technology
关键词
脉冲
中子源
瞬时退火效应
半导体器件
Burst neutron reactor Transient annealing effect Semicondctor devices)
