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钽阴极在热阴极辉光放电中行为与防护 被引量:2

Behavior and protection of tantalum cathode in a hot cathode glow discharge
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摘要 为快速沉积高品质金刚石膜,建立了热阴极等离子体化学气相沉积方法.相对于常规冷阴极辉光放电而言,热阴极辉光放电是一种新型放电形式,具有许多新的特性,其中重要一方面是阴极工作在较高的温度(700~1200℃).研究了钽阴极在此温度条件下,在PCVD气氛中的反应情况.结果表明,钽与气氛中的碳反应形成了有益于放电和阴极防护的碳化钽表面,而气氛中氧的存在会影响阴极的正常工作,甚至造成阴极损坏.为有效保护阴极,需严格控制真空系统的本底真空度和漏气率. Hot cathode chemical vapor deposition method was established in order to deposit highquality diamond films with high deposition rate. Compared with the conventional cold cathode glow discharge, the hot cathode glow discharge is a new type of gas discharge. It has many new characters, one of which is that the cathode is in a hot state with the temperature about 700 - 1 200 ℃. The reaction and protection of tantalum cathode in the PCVD ambient under such temperature range were discussed. The research results showed that tantalum reacted with carbon to form a TaC layer on the surface of the cathode, which was beneficial to the discharge and the protection of the cathode. However, the existence of oxygen in the ambient is harmful to the cathode. So it is necessary to control the base pressure and leakage of the vacuum system to guarantee the normal function of the cathode.
出处 《大连理工大学学报》 EI CAS CSCD 北大核心 2006年第2期157-159,共3页 Journal of Dalian University of Technology
基金 "八六三"计划新材料领域资助项目
关键词 热阴极 辉光放电 tantalum hot cathode glow discharge
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  • 1白亦真,吕宪义,金曾孙,姜志刚.影响大电流热阴极辉光放电稳定工作的因素[J].吉林大学学报(理学版),2006,44(1):89-92. 被引量:2
  • 2BAI Yi-zhen,JIN Zeng-sun,L(U) Xian-yi,et al.Influence of Cathode Temperature on GasDischarge and Growth of Diamond Films in DC-PCVD Processing[J].Diamond & RelatedMaterials,2005,14:1494-1497.
  • 3BAI Yi-zhen,JIN Zeng-sun,LU Xian-yi,et al.High Rate Growth of Thick Diamond Films byHigh-current Hot-cathode PCVD[J].Journal of Crystal Growth,2005,280:539-544.
  • 4Culllity B D.Element of X-ray Diffraction[M].2nd ed.London:Addison-Wesley,1978.
  • 5Windischmann H.Intrinsic Stress in Sputtered Thin Films[J].J Vac Sci TechnolA,1991,9(4):2431-2436.
  • 6金曾孙,吕宪义,姜志刚,等.热阴极辉光等离子体化学相沉积制备金刚石膜的工艺:中国发明专利,ZL94116283.4[P].1999-11-03
  • 7BAI Yi-zhen,JIN Zeng-sun,L(U) Xian-yi,et al.Influence of cathode temperature on gas discharge and growth of diamond films in DC-PCVD processing[J].Diamond & Related Mater,2005,14:1494-1497
  • 8BAI Yi-zhen,JIN Zeng-sun,L(U) Xian-yi,et al.High rate growth of thick diamond films by high-current hot-cathode PCVD[J].J Crystal Growth,2005,280:539-544
  • 9金曾孙,姜志刚,白亦真,吕宪义.直流热阴极PCVD法制备金刚石厚膜[J].新型炭材料,2002,17(2):9-12. 被引量:20

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