期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种高性能横向接触式微机械RF开关的分析与设计 被引量：2

Design and Analysis of a Lateral Lateral DC-Contact MEMS RF Switch with High Performance
下载PDF
导出
摘要 设计了一种新型横向接触式微机械RF开关,描述了其结构和工作原理．采用以电镀为主的工艺流程,并利用SU8光刻胶实现特殊器件结构,可实现Post-CMOS集成．利用模拟软件CoventorWare 2004和MEMS Pro 5．0 (包含 ANSYS 8．0)协同设计,对该器件进行了静态、模态和瞬态分析,得到吸合电压和吸合时间等重要性能参数．尤其在瞬态分析时运用了集总参数建模的方法,简化了计算．该器件的吸合电压低于30 V,在驱动电压为50 V的情况下,吸合时间达到16．1 ms． A novel lateral DC-contact MEMS RF switch is investigated in this paper. The structure and the operation principle are described. A post-CMOS fabrication process flow is proposed and verified with CoventorWare 2004, which utilizes electroplating to form the structure of the device. SUB photoresist is used for special connections. CoventorWare 2004 and MEMS Pro 5.0 （ including ANSYS 8.0） are used to accommodate the simulation. Static, modal and dynamic simulations are conducted respectively, and the design parameters are optimized. Dynamic simulation is carried out with a novel lumped modeling approach, which greatly simplifies the computation. The simulated Pull-in voltage is lower than 30 V with a Pull-in time of 16.1 ms under an actuation voltage of 50 V.
作者 范炜 郭会勇 施文典 陈兢
机构地区 北京大学微电子学研究所 中国科学院电子学研究所
出处 《纳米技术与精密工程》 CAS CSCD 2006年第1期46-53,共8页 Nanotechnology and Precision Engineering
关键词 微机电系统 RF开关 吸合 瞬态模拟 集总参数分析 Post-CMOS MEMS RF switch Pull-in transient simulation lumped element modeling Post-CMOS
分类号 TM564 [电气工程—电器]
  • 相关文献

参考文献10

  • 1[1]Dimitrios Peroulis,Linda P B Katehi.Spring-loaded DCcontact RF MEMS switches [J].International Journal of RF and Microwave Computer-Aided Engineering,2004,14 (4):345-355.
  • 2[2]Schauwecker B,Strohm K M,Mack T,et al.Serial combination of ohmic and capacitive RF MEMS switches for large broadband applications [J].Electronics Letters,2004,40(1):44-46.
  • 3[3]Newman H S.RF MEMS switches and applications [A].In:40th Annual Reliability Physics Symposium Proceedings[C].Dallas,USA:2002.111-115.
  • 4[4]Huang J M,LiewK M,Wong C H,et al.Mechanical design and optimization of capacitive micromachined switch[J].Sensors and Actuators,2001,A93(3):273-285.
  • 5[5]Kim Jong-Man,Park Jae-Hyoung,Baek Chang-Wook,et al.The SiOG-based single-crystalline silicon (SCS) RF MEMS switch with uniform characteristics [J].Journal of Microelectromechanical System,2004,13 (6):1036-1042.
  • 6[6]Stephen D Senturia.Microsystem Design[M].Boston:Kluwer Academic Publishers,2002.
  • 7[7]徐泰然.MEMS和微系统--设计与制造[M].北京:机械工业出版社,2004.
  • 8[8]CoventorWare ANALYZER Version 2004 Reference Guide[Z].Coventor Inc,2004.
  • 9[9]ANSYS Release 8.0 Documentation [Z].ANSYS Inc,2004(in Chinese).
  • 10[10]Patrick Stanley Riehl.Microsystems for electrostatic sensing[D].Ann Arbor:ProQuest Information and Learning Company,2003.

共引文献2

同被引文献6

  • 1Liu A Q,Palei W,Tang M,et al.Microstrip lateral RF MEMS switch integrated with multi-step CPW transition[J].Journal of Semiconductor Technology and Science,2007,(7):93-95.
  • 2Hyman D.Schmitz A,Warneke B,et al.GaAs-compatible surface-micromachined RF MEMS switches[J].Electronn Lett,1999,9(12):520-522.
  • 3Kang S,Kim H C,Chun K.A low-loss,single-pole,four-throw RF MEMS switch driven by a double stop comb drive[J].Journal of Micromechanics and Microengineering,2009,19(3):035011.
  • 4Kang S,Moon S,Kim H C,et al.See-saw type RF MEMS switch with narrow gap vertical comb[J].Journal of Semiconductor Technology and Seience,2007,3(7):177-182.
  • 5Dai C L,Peng H J,Liu M C,et al.Design and fabrication of RF MEMS switch by the CMOS process[J].Tamkang Journal of Science and Engineering,2005,3(8):197-202.
  • 6朱健,林金庭,林立强.DC—20GHz RF MEMS Switch[J].Journal of Semiconductors,2001,22(6):706-709. 被引量：10

引证文献2

二级引证文献3

纳米技术与精密工程
2006年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部