5．2～5．8GHz有源巴仑MMIC

5.2～5.8 GHz Active Balun MMIC

采用0．5μm GaAs pHEMT工艺研制的5．2～5．8GHz有源单片式巴仑芯片，最终测试表明：工作带宽之内，芯片输入输出驻波均小于1．5，两输出端幅度之差最大为0．8dB（@5．8GHz），最小为0．08dB（@5．6GHz）,相位之差为174．3°（@5．2GHz）到180．6°（@5．8GHz），与理想差分比较，带内误差小于6°，双端输出时具有明显的功率增益，约在1．7～4．95dB之间，P1dH输出功率为10．5dBm左右，二次谐波失真比HDz典型值为-30dBc。

A 5. 2-5. 8 GHz active balun MMIC is designed by using 0. 5μm gate GaAs pHEMT technology. The final results show that input and output VSWR are both below 1.5. The maximum output amplitude mismatch is 0. 8 dB（@5. 8 GHz）, while the minimal output amplitude mismatch is 0. 08 dB（@5.6 GHz）. And the phase difference of the two balanced ports ranges from 174. 3°（@5.2 GHz） to 180.6°（@5.8 GHz）. Compared to the ideal mode, the in band error is less than 6°. The double-ended output power gain between 1. 7-4. 95 dB, P1dB attached 10. 5 dBm, and typical HD2is -30 dBco.