摘要
在考虑到杂质的不完全离化作用时，建立了SiC埋沟PMOSFET在发生表面多子耗尽时的电流解析模型。实验结果和模拟结果的一致性说明了此模型的准确性。在300～600K温度范围表面弱电场的条件下．由于杂质不完全离化作用得到充分体现．因此器件的工作状态有不同于常规模型下的特性；当温度升高时离化率的增大使得杂质的不完全离化作用得不到体现，所以文中模型的结果向常规模型的结果靠近．且都与实验结果接近。同时为了充分利用埋沟器件体内沟道的优势．对埋沟掺杂的浓度和深度也进行了合理的设计。
Taking incomplete ionization of dopant into consideration, an analytical current model in depletion 6H-SiC buried channel PMOSFET is established. Comparising the results of simulation and experiment has shown the validity of this model. Full exhibition of incomplete ionization of dopant from 300K to 600K under the condition of weak electronic field results in different characteristics from those of conventional model. This model, close to experiment, approximates normal model due to the ionization increasing at high temperature. To take full advantages of internal channel in BCMOSFETs, a right design of the dopant concentration and depth in buried-channel region is also processed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第1期64-68,共5页
Research & Progress of SSE
基金
科技基金(41308060202)
教育部跨世纪人才培养基金资助
