元胞自动机方法模拟硅的各向异性腐蚀研究

Study on Simulation of Silicon Anisotropic Etching Using Cellular Automata Method

随着计算机运算速度的提高及M EM S结构变得日渐复杂,元胞自动机(CA)方法逐渐在M EM S CAD方面显出优势。针对硅的各向异性腐蚀模拟,首先建立硅衬底表面元胞的腐蚀过程二维CA模型,然后推广为三维CA模型,从而建立了硅的各向异性腐蚀的连续CA模型。已有实验结果和理论分析证明了模型的效果。

With the progress of computer computing speed and increasing complex structures for MEMS, the application of cellular automata （CA） methods in MEMS simulation is preferred, because CA method exhibits high efficiency and high accuracy when handling complex mask shapes and forming 3-D structures. A CA model is presented in two dimensions, and extended to three dimensions for silicon anisotropie etching. The effectiveness of the simulation results was confirmed using the available experimental results and theoretical analysis.