硅-硅键合界面氧化层模型与杂质分布的模拟

The Model of Interfacial Oxide and the Simulation of Impurity Distribution of Silicon Direct Bonding

硅-硅直接键合的硅片界面存在一层很薄的氧化层,其化学成分是非化学计量比的氧化物S iOw(0<w<2)。杂质在界面氧化层S iOw中的扩散系数与化学组成有关。文中根据建立的界面氧化层模型推导出了杂质在界面氧化层S iOw中的杂质扩散系数D(w)和在S i/S iOw界面处的分凝系数m(w)。最后,根据这些关系和键合界面的杂质扩散模型,对杂质分布进行了模拟并且把模拟结果与实验结果进行了比较,结果一致。这一模型和模拟结果对硅-硅直接键合设计有一定参考价值。

There is a very thin layer of native oxide between the directly bonded silicon wafers. It is composed of SiOω（0〈ω〈2）. The diffusion coefficient of impurity in interracial layer of SiOω is dependent on the composition of the interface, which is described by the parameter w. Based on the model of the interracial oxide, the impurity diffusion coefficient D（ω） in interracial layer SiOωand the impurity segregation coefficient m（ω） at Si/SiOω interface are derived. Finally, the impurity distribution of the whole bonded wafers is studied and simulated. The simu lated results are consistent with the experimental results. The model and the simulation results can be the reference in design of bonding process.