TiO_2掺杂Ag/SnO_2电接触材料物理性能的研究

A Research on the Physical Properties of Electronic Contact Material of TiO_2 Mixed with Ag/SnO_2

采用机械混合法、溶胶-凝胶法制备TiO2掺杂Ag/SnO2电接触材料。实验结果表明,在机械混合法中,Ti4+不能进入SnO2的晶格,也没有提高SnO2的电导率;在溶胶-凝胶法中,Ti4+能够很好地进入SnO2的晶格,从而改善触头的电性能。微观组织分析表明:纳米触头中SnO2的分布要比非纳米触头中SnO2分布均匀,可以避免因SnO2的富集而降低电导率,从而提高Ag/SnO2触头的电性能和电寿命。

The mechanical admixture method and sol-gel method were employed to prepare TiO2-doped Ag/SnO2 contact malarial. Experimentals show that Ti^4＋gets into the crystal lattice of SnO2 and the conductivity of SnO2 has been improved in the sol-gel method, while it is the same in the mechanical admixture method. Microstructure photos show that SnO2 distributes mere uniformly in nanometer contact material than in the non-nanometer contact material, and the electric performance and life could be imnroved by the avoidance of the accumulation of SnO2 in nanometer contact material.