Al-Mg-Si合金滑移面结合及位错运动机制

The Bond between Sliding Faces and the Mechanism of Dislocation Movement of Al-Mg-Si Alloys

运用固体经验电子理论(EET理论),对A l-Mg-S i合金GP区(L10型,下同)、β相(Mg2S i)相邻滑移面之间总的共价键结合能力进行了计算,结果表明:GP区与β相滑移面之间总的结合能力分别为基体A l的1.36与3.32倍,通过这种结合能力的比较,可以合理解释它们的硬度及其对合金的硬化强化作用与位错不同交互机理的内在原因.

This paper calculates the whole valence bonding power between adjacent sliding faces of the GP zones with model L10 and phase（ Mg2Si） in AI - Mg - Si alloys according to the empirical electron theory （EET） of solid. The results show that the whole valence bonding power between adjacent sliding faces of the GP zones and phase are respectively ＂1.36 and 3.32 times of that of matrix AI, which can be used to explain reasonably the inside causes for the hardness of GP zones and phase,alloy hardened or strengthened as well as different interaction mechanism with dislocation.