摘要
A novel structure for a charge pump circuit is proposed, in which the charge-pump (CP) current can adaptively regulated according to phase-locked loops (PLL) frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor (CMOS) mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.
A novel structure for a charge pump circuit is proposed, in which the charge-pump (CP) current can adaptively regulated according to phase-locked loops (PLL) frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor (CMOS) mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.
基金
SupportedbytheNationalNaturalScienceFoundationofChina(F60135020)