摘要
利用Ge的三维生长特性和迅速弛豫,在Si衬底上形成有一定高度的岛状Ge层,继续生长不到200nmSiGe合金就可获得较高质量的缓冲层.这种很薄的缓冲层已用于生长Ge/Si短周期超晶格.超晶格的优良性能表明Ge岛技术是生长配晶体的有效方法.薄的外延厚度和低的工艺温度与集成电路工艺是完全相容的.
Abstract A thin Ge islanding film inserted between SiGe buffer layer and Si substrate may greatly reduce the necessary buffer thickness to 100 ̄200 urn maintaining the same good crystal quality.A very favorite property of a Ge4/Si6 short-period superlattices successively grown on the 150 urn GeSi alloy buffers with 1 nm Ge islanding layer inserted shows that the Ge island method is valid.
基金
国家自然科学基金
博士点基金