气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料

InP and InAs Based Ⅲ-Ⅴ Compound Materials Grown by Gas-Source Molecular Beam Epitaxy

本文简要报告我们气态源分子束外延实验结果．材料是ＧａＡｓ（１００）衬底上外延的晶格匹配的Ｉｎｙ（Ｇａ１－ｘＡｌｘ）１－ｙＰ（ｘ＝０～１，ｙ＝０．５），ＩｎＧａＰ／ＩｎＡｌＰ多量子阱；在ＩｎＰ（１００）衬底上外延的ＩｎＰ，晶格匹配的ＩｎＧａＡｓ、ＩｎＡｌＡｓ以及ＩｎＰ／ＩｎＧａＡｓ、ＩｎＰ／ＩｎＡｓＰ多量子阱，ＩｎＧａＡｓ／ＩｎＡｌＡＳＨＥＭＴ等．外延实验是用国产第一台化学束外延（ＣＢＥ）系统做的．

Abstract We report on the growth and properties of the InAs and InP based Ⅲ-Ⅴ compounds grown in our laboratory by gas source molecular beam epitaxy technique (GSMBE)using the first China-made chemical beam epitaxy(CBE) system. These grown materials are the lattice-matched Iny (Ga1-xAlx)1-yP (x = 0￣1, y≈0. 50) , InGaP/InAlP multiple quantum wells (MQWs)on GaAs (100) substrates, the lattice-matched Inp, InGaAs, InGaAs/InAlAs high electron mobility transistor (HEMT) structures, InGaAs/InP MQWs and the strained-layer In(AsP)/InP MQWs on InP(100) substrates.