全离子注入自对准难熔金属氮化物复合栅GaAs　MESFET技术研究

Investigation of Fully Ion Implantation Self-Aligned Refractory Metal Nitride Gate GaAs MESFET Technology

本文研究了先进的全离子注入自对准难熔金属氮化物复合栅ＧａＡｓＭＥＳＦＥＴ场效应晶体管的工艺技术．首次使用Ｍｏ／ＺｒＮ作为复合栅的材料，ＡＩＮ薄膜作为器件介质钝化层，制作出了可用于ＧａＡｓ超高速集成电路的场效应晶体管，晶体管的跨导为１６０ｍＳ／ｍｍ，其栅漏反向击穿电压大于５Ｖ．

Abstract The process technology of fully ion implantation self-aligned refractory metal nitride gate GaAs MESFET is investigated. The Mo/ZrN double films as gates and AlN for medium and passivation films of devices are used for the first time. The GaAs metal semiconductor field-effect transistors are fabricated for GaAs VLSI. The transconductance of transistor is about 160mS/mm. The reverse breakdown voltage Vgd is more than 5V.