摘要
本文研究了先进的全离子注入自对准难熔金属氮化物复合栅GaAsMESFET场效应晶体管的工艺技术.首次使用Mo/ZrN作为复合栅的材料,AIN薄膜作为器件介质钝化层,制作出了可用于GaAs超高速集成电路的场效应晶体管,晶体管的跨导为160mS/mm,其栅漏反向击穿电压大于5V.
Abstract The process technology of fully ion implantation self-aligned refractory metal nitride gate GaAs MESFET is investigated. The Mo/ZrN double films as gates and AlN for medium and passivation films of devices are used for the first time. The GaAs metal semiconductor field-effect transistors are fabricated for GaAs VLSI. The transconductance of transistor is about 160mS/mm. The reverse breakdown voltage Vgd is more than 5V.
基金
国家自然科学基金